438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
570 | DF | FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT) {4} |
572 | DF | .~ Compound semiconductor {2} |
573 | DF | .~.~ Multilayer electrode {2} |
575 | .~.~.~ Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof) |