US PATENT SUBCLASS 438 / FOR 292
.~.~.~ Either Si (Silicon) or Ge (Germanium) layered with or on compound formed from Group III and Group V elements (437/132)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 286  DF  .~.~ Heteroepitaxy (437/126) {7}
FOR 292.~.~.~ Either Si (Silicon) or Ge (Germanium) layered with or on compound formed from Group III and Group V elements (437/132)

DEFINITION

Classification: 438/FOR.292

Either Si(Silicon) or Ge(Germanium) layered with or on compound formed from Group III and Group V elements:

Foreign art collection for processes for growing either a Si(Silicon) or Ge(Germanium) layer with or on a compound formed from Group III B(Bron), Al(Aluminum), Ga(Gallium), In(Indium), etc. and Group V elements N(Nitrogen), P(Phosphorus), As(Arsenic), Sb(Antimony), Bi(Bismuth) etc.