US PATENT SUBCLASS 438 / 214
.~.~.~ Having underpass or crossunder

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
214.~.~.~ Having underpass or crossunder

DEFINITION

Classification: 438/214

Having underpass or crossunder:

(under subclass 199) Process for making complementary insulated gate field effect transistors having an electrically conductive structure located within the semiconductor substrate which functions to electrically connect the transistors.