US PATENT SUBCLASS 438 / FOR 131
.~.~.~.~ Substrate contains silicon or silicon compound (156/657.1)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 128  DF  .~.~ Differential etching of a substrate (156/654.1) {2}
FOR 129  DF  .~.~.~ Composite substrate (156/655.1) {2}
FOR 131.~.~.~.~ Substrate contains silicon or silicon compound (156/657.1)

DEFINITION

Classification: 438/FOR.131

Substrate contains silicon or silicon compound:

Foreign art collection for processes wherein at least a portion of the composite includes a silicon atom in elemental form or in chemical combination.