US PATENT SUBCLASS 438 / 966
SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER
Current as of:
June, 1999
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438 /
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SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS
966
SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER
DEFINITION
Classification: 438/966
SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER
Art collection involving enhancing the oxidation of predetermined substrate regions by ion amorphousization of the regions.