US PATENT SUBCLASS 438 / FOR 398
.~.~ Monoxide or dioxide or Ge (Germanium) or Si (Silicon) (437/238)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 385  DF  INCLUDING COATING OR MATERIAL REMOVAL, E.G., ETCHING, GRINDING, ETC. (437/ 225) {9}
FOR 395  DF  .~ Of a dielectric or insulative material (437/235) {4}
FOR 398.~.~ Monoxide or dioxide or Ge (Germanium) or Si (Silicon) (437/238) {2}
FOR 399  DF  .~.~.~> By reacting with substrate (437/239)
FOR 400  DF  .~.~.~> Doped with impurities (437/240)

DEFINITION

Classification: 438/FOR.398

Monoxide or dioxide of Ge (Germanium) or Si (Silicon):

Foreign art collection for processes wherein the nonconductive substrate is composed of either germanium monoxide (GeO) or germanium dioxide (GeO1) or silicon monoxide (SiO) or silicon dioxide (SiO2).