US PATENT SUBCLASS 438 / FOR 158
.~.~.~ Providing nondopant ion including proton (437/24)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 158.~.~.~ Providing nondopant ion including proton (437/24)

DEFINITION

Classification: 438/FOR.158

Providing nondopant ion including proton:

Foreign art collection for processes involving use of beam energy to introduce ions incapable of changing the conductivity type of the substrate, e.g., rare gas ions, halogen ions, group IV ions in Si/Ge, amorphosizing ions, i.e., oxygen/nitrogen ions, etc.