US PATENT SUBCLASS 438 / 308-- .~.~ Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

US PATENT SUBCLASS 438 / 308
.~.~ Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

Current as of: June, 1999
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438 /	HD	SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142	DF	MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197	DF	.~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
308		.~.~ Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

DEFINITION

Classification: 438/308

Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.):

(under subclass 197) Process for making an insulated gate field effect transistor having a step of irradiating the semiconductor substrate to alter the electrical properties of semiconductive regions thereof.

SEE OR SEARCH THIS CLASS, SUBCLASS:

795, for a process of modifying properties of semiconductive regions of the substrate via radiation or energy treatment.