US PATENT SUBCLASS 438 / 291
.~.~.~ Using channel conductivity dopant of opposite type as that of source and drain

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
289  DF  .~.~ Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.) {2}
291.~.~.~ Using channel conductivity dopant of opposite type as that of source and drain

DEFINITION

Classification: 438/291

Using channel conductivity dopant of opposite type as that of source and drain:

(under subclass 289) Process wherein the dopant and the semiconductor active channel region beneath the gate insulator are of the same conductivity type.