US PATENT SUBCLASS 438 / 289
.~.~ Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
289.~.~ Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.) {2}
290  DF  .~.~.~> After formation of source or drain regions and gate electrode
291  DF  .~.~.~> Using channel conductivity dopant of opposite type as that of source and drain

DEFINITION

Classification: 438/289

Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.):

(under subclass 197) Process for making an insulated gate field effect transistor having a step of introducing electrically active dopant species into the semiconductor active channel region beneath the gate insulator.

SEE OR SEARCH THIS CLASS, SUBCLASS:

276, for a process of doping the semiconductor channel region beneath gate insulator of selected transistors to make plural field effect transistors of differing electrical characteristics.