US PATENT SUBCLASS 438 / 795
RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

795RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.) {3}
796  DF  .~> Compound semiconductor {1}
798  DF  .~> Ionized irradiation (e.g., corpuscular or plasma treatment, etc.)
799  DF  .~> By differential heating

DEFINITION

Classification: 438/795

RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.):

(under the class definition) Process of radiating a semiconductor substrate with a form of energy to change some characteristic thereof.

SEE OR SEARCH THIS CLASS, SUBCLASS:

308, for a process of making an insulated gate field effect transistor having a step of modifying semiconductor regions of the substrate via a radiation or energy treatment.

378, for a process of making a bipolar transistor having a step of modifying semiconductor regions of the substrate via a radiation or energy treatment.

471, for a process of gettering a semiconductive substrate (including layers thereon) by a thermal treatment.

466, for a process of directly applying electrical current to a semiconductor substrate.

SEE OR SEARCH CLASS

117, Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor, for processes of heat treating polycrystalline or amorphous semiconductor material to thereby cause single crystal growth. 219, Electric Heating, particularly

638, for inductive heating of a semiconductive rod.

250, Radiant Energy, particularly

492.2+, for methods of using, generating, or controlling ion bombardment of semiconductive substrates when there is no indication of what occurs to the substrate.