US PATENT SUBCLASS 438 / FOR 114
.~.~.~ With substrate rotation, repeated dipping, or advanced movement (156/639.1)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 112  DF  .~.~ With relative movement between the substrate and a confined pool of etchant (156/637.1) {2}
FOR 114.~.~.~ With substrate rotation, repeated dipping, or advanced movement (156/639.1)

DEFINITION

Classification: 438/FOR.114

With substrate rotation, repeated dipping, or advanced movement:

Foreign art collection for processes wherein the substrate is (a) rotated with respect to the pool of etchant, (b) repeatedly dipped into and removed from a pool of etchant, or (c) moved through a pool of etchant.