US PATENT SUBCLASS 438 / 41
.~.~ With epitaxial deposition of semiconductor adjacent mesa

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

22  DF  MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL {12}
39  DF  .~ Mesa formation {2}
41.~.~ With epitaxial deposition of semiconductor adjacent mesa

DEFINITION

Classification: 438/41

With epitaxial deposition of semiconductor adjacent mesa:

(under subclass 39) Process including a step of epitaxial growth of semiconductor material on the portion of the substrate adjacent the mesa.