US PATENT SUBCLASS 438 / 709
.~.~.~.~ Photo-induced plasma etching

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~ Utilizing electromagnetic or wave energy {3}
708  DF  .~.~.~ Photo-induced etching {1}
709.~.~.~.~ Photo-induced plasma etching

DEFINITION

Classification: 438/709

Photo-induced plasma etching:

(under subclass 708) Processes wherein the photo-induced vapor phase etching is accompanied with the excitation of the etchant into a plasma.

(1) Note. A plasma is a gas that is sufficiently ionized for its properties to depend on the ionization. It contains approximately equal numbers of positive ions and electrons, so the mixture is electrically neutral, highly conductive, and affected by magnetic fields. A thermal plasma is produced by temperatures above 20,000 degrees centigrade.