US PATENT SUBCLASS 438 / 282
.~.~ Buried channel

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
282.~.~ Buried channel

DEFINITION

Classification: 438/282

Buried channel:

(under subclass 197) Process for making an insulated gate field effect transistor wherein the channel formed between the source and drain regions is configured so as to be located beneath the semiconductor substrate surface.