US PATENT SUBCLASS 438 / FOR 238
.~.~.~ By etching and refilling with semiconductor material having diverse conductivity (437/78)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 234  DF  .~.~ Isolation by PN junction only (437/74) {4}
FOR 238.~.~.~ By etching and refilling with semiconductor material having diverse conductivity (437/78)

DEFINITION

Classification: 438/FOR.238

By etching and refilling with semiconductor material having diverse conductivity:

Foreign art collection for processes for forming the isolation by etching and filling the etched region with a semiconductor material of the opposite type conductivity of the material etched.