US PATENT SUBCLASS 438 / 750
.~.~.~ To same side of substrate

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
745  DF  .~ Liquid phase etching {9}
749  DF  .~.~ Sequential application of etchant {1}
750.~.~.~ To same side of substrate {1}
751  DF  .~.~.~.~> Each etch step exposes surface of an adjacent layer

DEFINITION

Classification: 438/750

To same side of substrate:

(under subclass 749) Processes wherein the sequential liquid phase etching steps are carried out on the same major surface of the semiconductor substrate.