US PATENT SUBCLASS 438 / FOR 294
.~ By fusing dopant with substrate, e.g., alloying, etc. (437/134)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 294.~ By fusing dopant with substrate, e.g., alloying, etc. (437/134) {6}
FOR 295  DF  .~.~> Using flux (437/135)
FOR 296  DF  .~.~> Passing electric current through material (437/136)
FOR 297  DF  .~.~> With application of pressure to material during fusing (437/137)
FOR 298  DF  .~.~> Including plural controlled heating or cooling steps (437/138)
FOR 299  DF  .~.~> Including diffusion after fusion step (437/139)
FOR 300  DF  .~.~> Including additional material to improve wettability or flow characteristics (437/140)

DEFINITION

Classification: 438/FOR.294

By fusing dopant with substrate, e.g., alloying, etc.:

Foreign art collection for processes for incorporating an impurity into a semiconductor material by a melting operation.