US PATENT SUBCLASS 438 / FOR 254
.~.~ Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant Au (Gold), Cr (Cromium), Fe (Iron), Ni (Nickel), etc. (437/94)


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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 254.~.~ Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant Au (Gold), Cr (Cromium), Fe (Iron), Ni (Nickel), etc. (437/94)


DEFINITION

Classification: 438/FOR.254

Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc.:

Foreign art collection for processes involving the introduction of a less predominant dopant carrier functioning as a reducing dopant during the growth process, i.e., Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc.