US PATENT SUBCLASS 438 / 279
.~.~ Making plural insulated gate field effect transistors having common active region

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
279.~.~ Making plural insulated gate field effect transistors having common active region

DEFINITION

Classification: 438/279

Making plural insulated gate field effect transistors having common active region:

(under subclass 197) Process for making multiple insulated gate field effect transistors in which a transistor active region is shared between two or more field effect transistors.