US PATENT SUBCLASS 438 / FOR 113
.~.~.~ With removal of adhered reaction product from substrate (156/638.1)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 112  DF  .~.~ With relative movement between the substrate and a confined pool of etchant (156/637.1) {2}
FOR 113.~.~.~ With removal of adhered reaction product from substrate (156/638.1)

DEFINITION

Classification: 438/FOR.113

With removal of adhered reaction product from substrate:

Foreign art collection for processes directed to the formation of reaction products by reaction of the etching reagent with a constituent of the substrate and thereafter removing the reaction products from the substrate.