US PATENT SUBCLASS 438 / 187
.~.~ Specified crystallographic orientation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
186  DF  .~ Having junction gate (e.g., JFET, SIT, etc.) {9}
187.~.~ Specified crystallographic orientation

DEFINITION

Classification: 438/187

Specified crystallos:graphic orientation:

(under subclass 186) Process wherein a given feature of the junction gate field effect device is formed in a definite crystallos:graphic orientation relative to the substrate.

(1) Note. Processes of making a transistor in a semiconductor substrate of given orientation are not sufficient for placement in this subclass.