US PATENT SUBCLASS 438 / FOR 111
.~.~ With thin film of etchant between relatively moving substrate and conforming surface (e.g., chemical lapping, etc.) (156/636.1)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 111.~.~ With thin film of etchant between relatively moving substrate and conforming surface (e.g., chemical lapping, etc.) (156/636.1)

DEFINITION

Classification: 438/FOR.111

With thin film of etchant between relatively moving substrate and conforming surface (e.g., chemical lapping, etc.):

Foreign art collection for processes in which the etching occurs at a thin film of etchant present between the substrate and another conforming surface, the substrate and conforming surface being in relative motion to one another during the etching.