US PATENT SUBCLASS 438 / FOR 297
.~.~ With application of pressure to material during fusing (437/137)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 294  DF  .~ By fusing dopant with substrate, e.g., alloying, etc. (437/134) {6}
FOR 297.~.~ With application of pressure to material during fusing (437/137)

DEFINITION

Classification: 438/FOR.297

With application of pressure to material during fusion:

Foreign art collection for processes wherein pressure is applied during the fusion operation.