US PATENT SUBCLASS 438 / 254
.~.~.~.~.~ Including selectively removing material to undercut and expose storage node layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
253  DF  .~.~.~.~ Stacked capacitor {3}
254.~.~.~.~.~ Including selectively removing material to undercut and expose storage node layer

DEFINITION

Classification: 438/254

Including selectively removing material to undercut and expose storage node layer:

(under subclass 253) Process having a step of selectively removing material (e.g., by etching, etc.) to undercut and expose the capacitor electrode which serves as the storage node layer of the stacked capacitor.

(1) Note. The capacitor electrode on which the electrical charge is stored is referred to as the storage node layer.