US PATENT SUBCLASS 438 / 212
.~.~.~ Vertical channel

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
212.~.~.~ Vertical channel

DEFINITION

Classification: 438/212

Vertical channel:

(under subclass 199) Process for making complementary insulated gate field effect transistors wherein the active channel region of at least one of the transistors is configured to provide, at least in part, a vertically conductive pathway between source and drain regions.

SEE OR SEARCH THIS CLASS, SUBCLASS:

268, for a process of making a vertical channel insulated gate field effect transistor.