US PATENT SUBCLASS 438 / 380
AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

380AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)


DEFINITION

Classification: 438/380

AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.):

(under the class definition) Process for making a device which is configured to operate in a manner in which an external voltage is applied in the reverse-conducting direction of the semiconductor device junction with sufficient magnitude to cause the potential barrier at the junction to breakdown due to electrons or holes gaining sufficient speed to dislodge valence electrons and thus create more hole-electron current carriers resulting in a sudden change from high dynamic electrical resistance to very low dynamic resistance.

(1) Note. The terms Zener diode and Zener breakdown voltage are used rather loosely in that the breakdown mechanism above about 6 volts is thought to be due to avalanching and that below about 6 volts is thought to be due essentially to tunnelling.

SEE OR SEARCH THIS CLASS, SUBCLASS:

91, for a process of making a device or circuit which is responsive to a nonelectrical signal and operates in an avalanche breakdown mode.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

199, for an avalanche diode in a noncharge transfer device having a heterojunction, subclass 438 for a light-responsive avalanche junction device, subclass 481 for an avalanche diode having a Schottky barrier, subclass 551 for an avalanche diode used as a voltage reference element combined with pn junction isolation means in an integrated circuit, and subclasses 603+ for avalanche diodes in general.