US PATENT SUBCLASS 438 / FOR 246
.~.~ Using transitory substrate (437/86)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 246.~.~ Using transitory substrate (437/86)

DEFINITION

Classification: 438/FOR.246

Using transitory substrate:

Foreign art collection for processes wherein the base material exist only temporarily.