US PATENT SUBCLASS 438 / 319
.~.~.~ Air isolation (e.g., mesa, etc.)


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
312  DF  .~ Having heterojunction {7}
318  DF  .~.~ Including isolation structure {1}
319.~.~.~ Air isolation (e.g., mesa, etc.)


DEFINITION

Classification: 438/319

Air isolation (e.g., mesa, etc.):

(under subclass 318) Process for making a heterojunction bipolar transistor wherein the emitter or collector region of the device is a raised feature with respect to the plane of the substrate.

SEE OR SEARCH THIS CLASS, SUBCLASS:

343, for a process of making a nonheterojunction bipolar device having a mesa or stacked emitter.