US PATENT SUBCLASS 438 / FOR 291
.~.~.~ Si (Silicon on Ge (Germanium) or Ge (Germanium) on Si (Silicon) (437/131)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 286  DF  .~.~ Heteroepitaxy (437/126) {7}
FOR 291.~.~.~ Si (Silicon on Ge (Germanium) or Ge (Germanium) on Si (Silicon) (437/131)

DEFINITION

Classification: 438/FOR.291

Si(Silicon) on Ge(Germanium) or Ge(Germanium on Si(Silicon):

Foreign art collection for processes for depositing Si(Silicon on crystals on a Ge(Germanium) substrate or vice-versa.