US PATENT SUBCLASS 438 / FOR 162
.~.~.~.~ Through insulating layer (437/28)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 161  DF  .~.~.~ Including multiple implantations of same region (437/27) {4}
FOR 162.~.~.~.~ Through insulating layer (437/28) {1}
FOR 163  DF  .~.~.~.~.~> Forming field effect transistor (FET) type device (437/29)

DEFINITION

Classification: 438/FOR.162

Through insulating layer:

Foreign art collection for subject matter wherein the implantations pass through the same area which is an insulator.