US PATENT SUBCLASS 438 / 651
.~.~.~.~.~ Silicide

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
597  DF  .~ To form ohmic contact to semiconductive material {24}
618  DF  .~.~ Contacting multiple semiconductive regions (i.e., interconnects) {5}
642  DF  .~.~.~ Diverse conductors {6}
650  DF  .~.~.~.~ Having noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof) {1}
651.~.~.~.~.~ Silicide

DEFINITION

Classification: 438/651

Silicide:

(under subclass 650) Processes for forming a contact using the chemical combination of silicon (Si) with one of the noble group elements (e.g., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof).