US PATENT SUBCLASS 438 / 188
.~.~ Complementary junction gate field effect transistors

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
186  DF  .~ Having junction gate (e.g., JFET, SIT, etc.) {9}
188.~.~ Complementary junction gate field effect transistors

DEFINITION

Classification: 438/188

Complementary junction gate field effect transistors:

(under subclass 186) Process for making plural junction gate field effect transistors of opposite conductivity type (i.e., wherein source and drain regions of a first field effect transistor are of opposite conductivity type to source and drain regions of a second field effect transistor).