US PATENT SUBCLASS 438 / FOR 235
.~.~.~ By diffusion from upper surface only (437/75)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 234  DF  .~.~ Isolation by PN junction only (437/74) {4}
FOR 235.~.~.~ By diffusion from upper surface only (437/75)

DEFINITION

Classification: 438/FOR.235

By diffusion from upper surface only:

Foreign art collection for processes for forming the Pn junction by diffusion from only the topmost surface of the device.