US PATENT SUBCLASS 438 / FOR 109
.~.~.~.~ Metal layer etched (156/634.1)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 104  DF  .~.~ With uniting of preforms (e.g., laminating, etc.) (156/629.1) {2}
FOR 108  DF  .~.~.~ Differential etching (156/633.1) {1}
FOR 109.~.~.~.~ Metal layer etched (156/634.1)

DEFINITION

Classification: 438/FOR.109

Metal layer etched:

Foreign art collection for processes wherein a layer of the substrate etched contains metal atoms in elemental form, e.g., alloys, etc.