US PATENT SUBCLASS 438 / 235
.~.~.~ Heterojunction bipolar transistor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
234  DF  .~.~ Including bipolar transistor (i.e., BiMOS) {2}
235.~.~.~ Heterojunction bipolar transistor

DEFINITION

Classification: 438/235

Heterojunction bipolar transistor:

(under subclass 234) Process for making an insulated gate field effect transistor combined with a bipolar transistor

wherein the emitter-base junction or the collector-base junction of the bipolar transistor possesses an interface between two dissimilar semiconductor materials.