US PATENT SUBCLASS 438 / FOR 123
.~.~.~ Discrete junction isolated (e.g., mesa formation, etc.) (156/649.1)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 122  DF  .~.~ Etching isolates or modifies a junction in a barrier layer (156/648.1) {1}
FOR 123.~.~.~ Discrete junction isolated (e.g., mesa formation, etc.) (156/649.1)

DEFINITION

Classification: 438/FOR.123

Discrete junction isolated (e.g., mesa formation, etc.):

Foreign art collection for processes wherein a substrate containing a junction between contiguous layers of barrier layer material is etched in such a manner as to isolate multiple areas each containing a discrete junction.