US PATENT SUBCLASS 438 / 300
.~.~.~ Having elevated source or drain (e.g., epitaxially formed source or drain, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
299  DF  .~.~ Self-aligned {2}
300.~.~.~ Having elevated source or drain (e.g., epitaxially formed source or drain, etc.)

DEFINITION

Classification: 438/300

Having elevated source or drain (e.g., epitaxially formed source or drain, etc.):

(under subclass 299) Process including a step of forming the source or drain active region at a position above and laterally adjacent to the channel region of the transistor.