US PATENT SUBCLASS 438 / 717
.~.~.~.~ Utilizing multilayered mask

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~ Utilizing electromagnetic or wave energy {3}
710  DF  .~.~.~ By creating electric field (e.g., plasma, glow discharge, etc.) {17}
717.~.~.~.~ Utilizing multilayered mask

DEFINITION

Classification: 438/717

Utilizing multilayered mask:

(under subclass 710) Processes wherein selected regions of the semiconductor substrate are protected from the effects of the energized gas through use of a mask composed of plural layers.