US PATENT SUBCLASS 438 / 198
.~.~ Specified crystallographic orientation


Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use



438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
198.~.~ Specified crystallographic orientation


DEFINITION

Classification: 438/198

Specified crystallos:graphic orientation:

(under subclass 197) Process wherein a given feature of the junction gate field effect device is formed in a definite crystallos:graphic orientation relative to the substrate.

(1) Note. Processes of making a transistor in a semiconductor substrate of given orientation are not sufficient for placement in this subclass.