US PATENT SUBCLASS 438 / FOR 127
.~.~.~.~.~ Etched layer contains silicon (e.g., oxide, nitride, etc.) (156/653.1)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 124  DF  .~.~ Sequential application of etchant material (156/650.1) {1}
FOR 125  DF  .~.~.~ Sequentially etching the same surface of a substrate (156/651.1) {1}
FOR 126  DF  .~.~.~.~ Each etching exposes surface of an adjacent layer (156/652.1) {1}
FOR 127.~.~.~.~.~ Etched layer contains silicon (e.g., oxide, nitride, etc.) (156/653.1)

DEFINITION

Classification: 438/FOR.127

Etched layer contains silicon (e.g., oxide, nitride, etc.):

Foreign art collection for processes wherein at least one layer etched contains atoms of silicon.