438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
FOR 149 | DF | INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7} |
FOR 150 | DF | .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5} |
FOR 155 | DF | .~.~ Of semiconductor on insulating substrate (437/21) {14} |
FOR 173 | DF | .~.~.~ Involving Schottky contact formation (437/39) {12} |
FOR 177 | .~.~.~.~ Gate specific (specifics of gate insulator/structure/material/ contact) (437/40 GS) |