US PATENT SUBCLASS 438 / FOR 177
.~.~.~.~ Gate specific (specifics of gate insulator/structure/material/ contact) (437/40 GS)


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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 173  DF  .~.~.~ Involving Schottky contact formation (437/39) {12}
FOR 177.~.~.~.~ Gate specific (specifics of gate insulator/structure/material/ contact) (437/40 GS)