US PATENT SUBCLASS 438 / 397
.~.~ Including selectively removing material to undercut and expose storage node layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

381  DF  MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.) {4}
396  DF  .~ Stacked capacitor {3}
397.~.~ Including selectively removing material to undercut and expose storage node layer

DEFINITION

Classification: 438/397

Including selectively removing material to undercut and expose storage node layer:

(under subclass 396) Process for making a stacked capacitor having a step of selectively removing material to undercut and expose the capacitor electrode which serves as the storage node layer.

(1) Note. The capacitor electrode on which the electrical charge is stored is referred to as the storage node layer.