US PATENT SUBCLASS 438 / FOR 345
.~ Electrode formed on substrate composed of elements of Group II and Group VI semiconductor compound (437/185)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 340  DF  MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180) {13}
FOR 345.~ Electrode formed on substrate composed of elements of Group II and Group VI semiconductor compound (437/185)

DEFINITION

Classification: 438/FOR.345

Electrode formed on substrate composed of elements of Group II and Group VI semiconductor compound:

Foreign art collection for processes wherein the contact is placed on a base material made from Group II, Zn (Zinc), Cd (Cadium), Hg (Mercury), etc. and Group VI, O (Oxygen), S (Sulfur), Se (Selenium), Te (Tellurium) in the form of compounds which function as semiconductors.