US PATENT SUBCLASS 438 / FOR 267
.~.~.~ Compound formed from Group III and Group V elements (437/107)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 265  DF  .~.~ Vacuum growing using molecular beam, i.e., vacuum deposition (437/105) {2}
FOR 267.~.~.~ Compound formed from Group III and Group V elements (437/107)

DEFINITION

Classification: 438/FOR.267

Compound formed from Group III and Group V elements:

Foreign art collection for processes wherein the material which forms the semiconductor is composed of elements from Group III, B (Boron), Al (Aluminum), Ga (Gallium), In (Indium), etc. and Group V, N (Nitrogen), P (Phosphorus), As (Arsenic), Sb (Antimony), Be (Bismuth), etc.