US PATENT SUBCLASS 438 / FOR 396
.~.~ Containing Group III atom (437/236)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 385  DF  INCLUDING COATING OR MATERIAL REMOVAL, E.G., ETCHING, GRINDING, ETC. (437/ 225) {9}
FOR 395  DF  .~ Of a dielectric or insulative material (437/235) {4}
FOR 396.~.~ Containing Group III atom (437/236) {1}
FOR 397  DF  .~.~.~> By reacting with substrate (437/237)

DEFINITION

Classification: 438/FOR.396

Containing Group III atom:

Foreign art collection for processes wherein the nonconductor substrate contains a Group III, B (Boron), Al (Aluminum), Ga (Gallium), In (Indium), etc., atom.