US PATENT SUBCLASS 438 / FOR 260
.~.~ Growing silicon carbide (SiC) (437/100)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 260.~.~ Growing silicon carbide (SiC) (437/100)

DEFINITION

Classification: 438/FOR.260

Growing silicon carbide (SiC):

Foreign art collection for processes for growing silicon carbide (SiC).