US PATENT SUBCLASS 438 / 287
.~.~ Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
287.~.~ Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound

DEFINITION

Classification: 438/287

Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound:

(under subclass 197) Process for making an insulated gate field effect transistor wherein the gate dielectric insulator is constructed of plural diverse dielectrics (e.g., nitride and oxide, etc.) or of a nonsilicon containing dielectric compound.

SEE OR SEARCH THIS CLASS, SUBCLASS:

216, for a process of making complementary insulated gate field effect transistors at least one transistor having a gate insulator structure constructed of diverse dielectrics or of nonsilicon compound.

261, for a process of making a floating gate-type insulated gate field effect transistor having multiple interelectrode dielectrics or nonsilicon containing dielectric.