US PATENT SUBCLASS 438 / 733
.~.~.~ Using or orientation dependent etchant (i.e., anisotropic etchant)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~ Utilizing electromagnetic or wave energy {3}
733.~.~.~ Using or orientation dependent etchant (i.e., anisotropic etchant)

DEFINITION

Classification: 438/733

Using orientation dependant etchant (i.e., anisotropic etchant):

(under subclass 706) Processes wherein the vapor phase etching of the semiconductor substrate is produced through the use of an etchant possessing varying etching rates upon varying crystallos:graphic orientations.