US PATENT SUBCLASS 438 / 307
.~.~.~.~.~ Using same conductivity-type dopant

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
299  DF  .~.~ Self-aligned {2}
301  DF  .~.~.~ Source or drain doping {3}
306  DF  .~.~.~.~ Plural doping steps {1}
307.~.~.~.~.~ Using same conductivity-type dopant

DEFINITION

Classification: 438/307

Using same conductivity-type dopant:

(under subclass 306) Process wherein the same conductivity-type electrically active dopant is introduced using plural doping steps.